H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/1, 356/176
H01L 31/18 (2006.01) C30B 15/30 (2006.01) C30B 31/20 (2006.01) H01J 9/233 (2006.01) H01L 21/261 (2006.01) H01L 27/148 (2006.01)
Patent
CA 1293315
ABSTRACT OF THE DISCLOSURE A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity ?s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity ?s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity ?o is then ten or more times higher (100 ohm-cm. or more) than that ?s obtained following neutron irradiation. For instance, if ?s is to be 40 to 50 ohm-cm., ?o should be 680 to 1180 ohm-cm. Then, n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of ?o = 10 to 100 ohm-cm., or of 40 to 50 ohm-cm.
522442
Hamasaki Masaharu
Isawa Nobuyuki
Kanbe Hideo
Kato Yasaburo
Suzuki Toshihiko
Gowling Lafleur Henderson Llp
Sony Corporation
LandOfFree
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