Solid state image sensor

Details Solid state image sensor Solid state image sensor

H - Electricity

01

L

345/1

H01L 27/00 (2006.01) H01J 29/45 (2006.01) H01L 27/148 (2006.01) H04N 3/15 (2006.01)

Patent

CA 1125421

ABSTRACT OF THE DISCLOSURE A solid state image sensor of the so-called, inter-line transfer system with an overflow drain region is disclosed. The solid state image sensor comprises a semiconductor substrate, a plurality of sensor regions formed as a position of the substrate which is arranged in row and column direction. A shift register is provided at one side of the row of the sensor regions and an overflow drain region is provided at another side of the row of the sensor regions. A transfer electrode provided over a portion of the shift register and a transfer gate region which is between the picture element and the shift register to which is applied a clock voltage to both transfer signal changes in the shift register and to form a potential barrier at the transfer gate region during horizontal blanking intervals. A common sensor electrode is provided over the sensor region and a overflow control region which is located between the sensor region and the overflow drain region. Predetermined voltages are applied to the sensor electrode,at predetermined timings,in the selected horizontal blanking intervals. The voltages applied to the sensor electrode at the selected horizontal blanking interval gradually increase so as to achieve a so-called gamma correction.

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