Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

H - Electricity

04

B

350/54

H04B 5/02 (2006.01) H01L 27/088 (2006.01) H01L 27/146 (2006.01)

Patent

CA 1111131

SOLID-STATE IMAGING DEVICE Abstract of the Disclosure A solid-state imaging device has a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors. These elements are all formed in a major surface region of an N (or P)-type semiconductor body. The device is characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body. The switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, and the vertical scanning circuit being integrated in still another impurity layer. Predetermined voltages are applied to electrodes disposed on the respective impurity layers.

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