Solid-state imaging device

H - Electricity – 01 – L

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345/1, 375/40

H01L 27/14 (2006.01) H01L 27/146 (2006.01) H04N 3/14 (2006.01)

Patent

CA 1170341

- 1 - Abstract: A solid-state imaging device has picture elements each of which is composed of a photoelectric conversion element and a MOS transistor as a switching element. The picture elements are arranged in the form of a matrix. A scanning mechanism scans the picture elements to sequentially read out photoelectric conversion signals. The device is charac- terized in that at least a high-impurity-concentration diffusion layer serving as an output terminal of the MOS transistor constituting each picture element is formed on an insulator layer for isolating the elements. The result is avoidance of "smear", i.e., poor picture quality, and improved sensitivity.

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