Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

H - Electricity

01

L

345/4, 350/54

H01L 27/00 (2006.01) H01L 27/146 (2006.01) H01L 31/113 (2006.01)

Patent

CA 1128197

SOLID-STATE IMAGING DEVICE Abstract of the Disclosure A solid-state imaging device has in one major surface region of a monolithic semi-conductor body, photodiodes arrayed in two dimensions, vertical switching MOS transistors and horizontal switching MOS transistors for addressing the photodiodes, MOS transistors constituting vertical and horizontal scanning circuits for turning "on" and "off" the switching MOS transistors, and MOS transistors constituting other peripheral circuitry. The photodiodes are constructed as source regions of the vertical switching MOS transistors and the semiconductor body. The device is characterized in that among the source and drain regions of the various MOS transistors, the source regions of the vertical switching MOS transistors are lower in surface impurity concentration and deeper in junction depth than the other source and drain regions. This arrangement enables achievement of a highly integrated device that has a high sensitivity to short wavelength light. When the device is a colour one, it is possible to achieve an improved balance of long wavelength sensitivity.

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