H - Electricity – 04 – N
Patent
H - Electricity
04
N
350/54
H04N 5/30 (2006.01) H01L 27/146 (2006.01)
Patent
CA 1129081
SOLID-STATE IMAGING DEVICE Abstract of the Disclosure A solid-state imaging device has in one major surface region of an identical semiconductor substrate, photoelectric conversion elements arrayed in two dimensions, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal- insulator-semiconductor field effect transistors which select the photoelectric conversion elements. Vertical and horizontal scanning circuits turn "on" and "off" the switching transistors. The device is characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are put into a deeper cutoff state, i.e., that the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator- semiconductor field effect transistors are put into an accumulation level.
319704
Koike Norio
Kubo Masaharu
Ohba Shinya
Takemoto Iwao
Tanaka Shuhei
Hitachi Ltd.
Hitachi Denshi Kabushiki Kaisha
Kirby Eades Gale Baker
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