Solid state pick-up camera having a semiconductor...

Details Solid state pick-up camera having a semiconductor... Solid state pick-up camera having a semiconductor...

H - Electricity

01

L

350/40

H01L 27/14 (2006.01) H01L 27/148 (2006.01) H04N 3/14 (2006.01)

Patent

CA 1180104

PHN.9684 26 ABSTRACT: In a solid state imaging device, particularly a device based on the CTD-principle, blooming is prevented by switching during the integration period, surface por- tions of the semiconductor body in the image pick-up sec- tion alternately in inversion and in accumulation. In one state, excess charge carriers of the first type, gen- erated by over-exposure may be trapped in surface-states, In the other state these trapped carriers of the opposite carriers stored in an adjacent MOS-capacitor. This type of imaging device may be used in solid state cameras.

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