Solution for increasing wafer sheet resistance and/or...

C - Chemistry – Metallurgy – 11 – D

Patent

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C11D 3/39 (2006.01) C11D 7/32 (2006.01) C11D 11/00 (2006.01) H01L 21/02 (2006.01) H01L 21/3213 (2006.01) H01L 31/18 (2006.01) H01L 31/068 (2006.01)

Patent

CA 2749836

Treating thin film amorphous or mono- or multi-crystalline silicon wafer substrate for use in a photovoltaic cell, the wafer substrate having at least one of a pn- or np junction and a partial phosphosilicate or borosilicate glass layer on a top surface of the wafer substrate, to increase at least one of (a) the sheet resistance of the wafer and (b) the power density level of the photovoltaic cell made from said wafer. The treatment solution being an acidic treatment solution of a buffered oxide etch (BOE) solution of at least one tetraalkylammonium hydroxide, acetic acid, at least one non-ionic surfactant, at least one metal chelating agent, a metal free source of ammonia, a metal free source of fluoride ions, and water, mixed with an oxidizer solution and optionally water.

L'invention concerne le traitement d'un substrat de plaquette de silicium, amorphe, monocristallin ou polycristallin, en couches minces, destiné à être utilisé dans une cellule photovoltaïque. Ce substrat comprend au moins une jonction pn ou np et une couche de verre de phosphosilicate ou de borosilicate partielle sur la surface supérieure du substrat de plaquette, ce qui permet d'augmenter au moins (a) la résistance de couche de la plaquette ou (b) le niveau de densité de puissance de la cellule photovoltaïque fabriquée à partir de ladite plaquette. La solution de traitement selon l'invention est une solution acide constituée d'une solution de gravure oxyde tamponnée contenant au moins un hydroxyde de tétraalkylammonium, de l'acide acétique, au moins un tensioactif non ionique, au moins un chélateur métallique, une source d'ammoniac exempte de métal, une source d'ions fluorure exempte de métal et de l'eau, mélangée à une solution d'oxydant et facultativement à de l'eau.

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