H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/04 (2006.01) H01L 21/311 (2006.01) H01L 21/328 (2006.01) H01L 21/768 (2006.01) H01L 51/40 (2006.01) H01L 27/32 (2006.01)
Patent
CA 2394881
A method for forming a transistor, comprising: depositing a first material from solution in a first solvent to form a first layer of the transistor; and subsequently whilst the first material remains soluble in the first solvent, forming a second layer of the transistor by depositing over the first material a second material from solution in a second solvent in which the first material is substantially insoluble.
La présente invention concerne un procédé de production d'un transistor, comportant les étapes suivantes: dépôt d'un premier matériau en solution dans un premier solvant afin de former une première couche du transistor; ensuite pendant que le premier matériau est encore à l'état soluble dans le premier solvant, formation d'une deuxième couche du transistor par dépôt sur le premier matériau d'un deuxième matériau en solution dans un deuxième solvant dans lequel le premier matériau est sensiblement insoluble.
Friend Richard Henry
Kawase Takeo
Sirringhaus Henning
Fetherstonhaugh & Co.
Plastic Logic Limited
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