C - Chemistry – Metallurgy – 07 – C
Patent
C - Chemistry, Metallurgy
07
C
C07C 309/71 (2006.01) C07C 205/23 (2006.01) G03F 7/004 (2006.01) G03F 7/022 (2006.01)
Patent
CA 2111632
A SOURCE OF PHOTOCHEMICALLY GENERATED ACID FOR MICROELECTRONIC PHOTORESISTS ABSTRACT A new photoacid generator having the formula Image Formula I wherein R = hydrogen, hydroxyl, or the -O-S (=O)2-Q moiety; R1 = CH2OS(=O)2-Q, or -NO2; R2 = CH2OS(=O)2-Q, or -NO2; R3 = lower alkyl or hydrogen; R4 = hydrogen, -CH2OS(=O)2-Q, or -NO2; R5 = hydrogen, -CH2OS(=O)2-Q, or -NO2; and Q is a diazonaphthoquinone moiety; with the proviso that R3 is lower alkyl when R2 and R4 are NO2, and with the proviso that R1 ? R2 and R4 ? R5. exhibits unprecedented sensitivity to actinic radiation. This compound is photochemically transformed from a non-acidic entity to photoproducts which contain both sulfonic and carboxylic acid functuional groups. The acid generator is effective with polymers having acid labile groups, converting them into alkaline-soluble polymers, and with polymers which do not have such acid labile groups. Positive or negative working photoresist compositions containing the new photoacid generator have unparalleled performance characteristics because of the increased acidity generated per quantum of light. A preferred photoacid generator is made by reacting 2,6- dimethylol-3,5-dinitro-p-alkyl phenol with a diazonaphthoquinone sulfonyl chloride.
Gowling Lafleur Henderson Llp
Morton International Inc.
LandOfFree
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