C - Chemistry – Metallurgy – 08 – L
Patent
C - Chemistry, Metallurgy
08
L
C08L 83/04 (2006.01) C03C 17/00 (2006.01) C03C 17/30 (2006.01) C07F 7/18 (2006.01) C08G 77/14 (2006.01) C08G 77/50 (2006.01) C08K 5/00 (2006.01) C08L 83/02 (2006.01) C08L 83/05 (2006.01) C09D 183/04 (2006.01) C09D 183/06 (2006.01) C09D 183/08 (2006.01) G03F 7/09 (2006.01) H01L 21/027 (2006.01)
Patent
CA 2374944
Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin- on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.
L'invention concerne un enduit antireflet photolithographie aux ultraviolets lointains comprenant un ou plusieurs composés organiques absorbant la lumière intégrés dans les matériaux spin-on-glass. Les composés absorbants sont fortement absorbés dans des plages de longueurs d'ondes comprises entre des longueurs d'ondes de 365 nm, 248 nm, et 193 nm pouvant être utilisées en photolithographie. Un procédé de fabrication de matériaux absorbants spin-on-glass comprend un ou plusieurs composés organiques absorbants caractérisés en ce qu'ils comprennent des réactifs alcoxysilane et halosilane durant la synthèse des matières spin-on-glass.
Baldwin Teresa
Hacker Nigel
Kennedy Joseph
Spear Richard
Alliedsignal Inc.
Gowling Lafleur Henderson Llp
Honeywell International Inc.
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