Spin-polarized electron emitter having semiconductor...

Details Spin-polarized electron emitter having semiconductor... Spin-polarized electron emitter having semiconductor...

H - Electricity

01

L

H01L 49/00 (2006.01) H01J 1/34 (2006.01) H01J 3/02 (2006.01) H01J 33/02 (2006.01) H01J 37/073 (2006.01)

Patent

CA 2106943

An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

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