C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.1
C23C 14/06 (2006.01) H01L 21/314 (2006.01) H01L 21/3205 (2006.01) H01L 29/51 (2006.01)
Patent
CA 1231916
C-7108/110-006-4 C-7141/110-006-7 ABSTRACT OF THE DISCLOSURE Amorphous and polycrystalline films of KP15 are formed by RF diode sputtering targets of KP15 and excess phosphorus in an arson phase. Substrate temperatures up to 280-300°C provide amorphous films. Higher temperatures provide micro- crystalline or polycrystalline films. These films have high resistance and may be used as the insulator in MIS devices employing III-V semiconductors. Co-sputtering with nickel increases the conductivity of the films from approximately 10-10(ohm-cm)-1 to 10-2(ohm-cm)-1; only reduces the optical gap by 0.2 eV; and reduces the activation energy from 0.8 eV to 0.2 eV; the nickel content varying from 5-15%. Sub- strates include glass, silicon, tantalum, stainless steel, gallium phosphide and gallium arsenide, and glass metallized with metals such as titanium, nickel and aluminum. Double diode electrical characteristics have been observed in de- vices formed on metallized glass substrates having co- sputtered thereon thin film polyphosphides and nickel with nickel and titanium top contacts.
457651
Bunz Lewis A.
Schachter Rozalie
Viscogliosi Marcello
Gowling Lafleur Henderson Llp
Stauffer Chemical Company
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