C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/167.5
C23C 14/34 (2006.01) H01J 37/34 (2006.01)
Patent
CA 1206914
-10- ABSTRACT A sputtering cathode apparatus for the deposition of thin films which are produced at a relatively high deposition rate. A relatively large planar maynetron sputtering system or apparatus is provided with a preferred single convoluted electron path so as to obtain high geometric efficiency. The target is larger than the substrate and the substrate motion is confined to an area within the defined target area. The cathode system requires a vacuum system of relatively small dimension due to the increase in target size in comparison with substrate size along with the provision for multiple plasma legs separated by non-emissive regions therebetween. This construction enables minimized substrate motion relative to the target.
435334
Davey Ernest A.
Hope Lawrence L.
Gte Products Corporation
R. William Wray & Associates
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