C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/52 (2006.01) C23C 14/34 (2006.01) C23C 14/35 (2006.01) C23C 14/54 (2006.01) H01J 37/32 (2006.01)
Patent
CA 2254650
In a method of sputtering thin films onto a substrate, the substrate is placed below a sputtering source assembly in a vacuum chamber. A light beam is projected onto the substrate and passes through an optical passage in the sputtering source assembly. In this way, the growth of the sputtered film can be accurately monitored at near normal angles of incidence.
Clarke Glenn A.
Osborne Norman
Sullivan Brian Thomas
Marks & Clerk
National Research Council Of Canada
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