Sputtering silicon dielectric films with noble gas mixtures

Details Sputtering silicon dielectric films with noble gas mixtures Sputtering silicon dielectric films with noble gas mixtures

C - Chemistry, Metallurgy

23

C

C23C 14/14 (2006.01) C23C 14/00 (2006.01)

Patent

CA 2155146

A method and apparatus for controlling operation of a magnetron sputtering system when depositing thin films of non-conductive or semi- conductive elements, such as silicon, or compounds thereof forming dielectrics, such as silicon dioxide, silicon nitride, and the like. A mixture of two different noble gases are used. The relative proportion of the two or more noble gases is selected to reduce the probability of arcing occurring during the sputtering process, thereby allowing control of the process by an automatic feedback control system to maintain stable operation within a desired hysteresis region of a deposition rate characteristic curve.

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