Sputtering target with bonding layer of varying thickness...

C - Chemistry – Metallurgy – 23 – C

Patent

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Details

C23C 14/00 (2006.01)

Patent

CA 2620721

Certain example embodiments of this invention relate to a rotatable magnetron sputtering target(s) for use in sputtering material(s) onto a substrate. In certain example embodiments, the target includes a cathode tube with a target material applied thereto via plasma spraying or the like. A bonding layer is provided on the tube, between the cathode tube and the target material. The bonding layer is thicker proximate at least one end portion of the target than at a central portion of the target in order to reduce the likelihood of burn- through to or of the cathode tube during sputtering.

Cette invention concerne, selon certains modes de réalisation donnés à titre d'exemple, une ou plusieurs cibles de pulvérisation magnétron rotatives destinées à être utilisées pour pulvériser un ou plusieurs matériaux sur un substrat. Dans certains modes de réalisation, la cible comprend un tube cathodique sur lequel un matériau cible est appliqué par projection au plasma ou analogue. Une couche de liaison est prévue sur le tube, entre le tube cathodique et le matériau cible. La couche de liaison est plus épaisse à proximité d'au moins une partie d'extrémité de la cible qu'au niveau d'une partie centrale de la cible, ce qui permet de réduire le risque de perçage par brûlure jusqu'au tube cathodique ou de celui-ci pendant la pulvérisation.

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