Sputtering targets and method for the preparation thereof

C - Chemistry – Metallurgy – 23 – C

Patent

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C23C 14/34 (2006.01) C03C 17/245 (2006.01) C23C 4/10 (2006.01) C23C 14/08 (2006.01)

Patent

CA 2241878

A process for the preparation of a sputtering target which comprises sub- stoichiometric titanium dioxide, TiO x, where x is below 2 having an electrical resistivity of less than 0.5 ohm.cm, optionally together with niobium oxide, which process comprises plasma spraying titanium dioxide, TiO2, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target base being coated with TiO x which is solidified by cooling under conditions which prevent the sub-stoichiometric titanium dioxide from combining with oxygen.

L'invention concerne un procédé de préparation d'une cible de pulvérisation cathodique qui comprend un oxyde de titane TiOx sous-stoechiométrique, c'est-à-dire dans lequel x est inférieur à 2. Cet oxyde a, par ailleurs, une résistivité inférieure à 0,5 ohms.cm. Cette cible peut également contenir de l'oxyde de niobium. Le procédé consiste à utiliser un plasma pour pulvériser du dioxyde de titane TiO2, éventuellement en combinaison avec de l'oxyde de niobium, sur une cible, dans une atmosphère appauvrie en oxygène et ne contenant pas de composés oxygénés. La base de la cible est alors couverte par le TiOx qui est solidifié par refroidissement dans des conditions qui empêchent l'oxyde de titane sous-stoechiométrique TiOx de se combiner avec de l'oxygène.

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