C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.1
C23C 14/00 (2006.01) C03C 17/245 (2006.01)
Patent
CA 1112601
Abstract of the Invention Consistent properties for indium oxide films deposited by cathode sputtering over a wide range of outgassing conditions are obtained by adjusting the flow rate of oxygen to maintain a constant discharge current while adjusting the flow rate of argon to maintain a constant pressure in the sputtering chamber.
310058
Gowling Lafleur Henderson Llp
Ppg Industries Inc.
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