Stabilization of aluminum arsenide

Details Stabilization of aluminum arsenide Stabilization of aluminum arsenide

C - Chemistry, Metallurgy

30

B

148/3.4

C30B 35/00 (2006.01) C22C 1/00 (2006.01) C30B 33/00 (2006.01)

Patent

CA 1055819

ABSTRACT Aluminum arsenide crystals, wherein gallium has been substituted for a minor portion of aluminum and which may be represented by the general formula Al1-xGaxAs wherein x has values in the range of 0.02 to 0.30, are annealed at a tem- perature of at least 700°C in presence of arsenic vapour where- by the stability of the crystals against attack by moisture is improved.

229814

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