Stabilization of amorphous semiconductors

Details Stabilization of amorphous semiconductors Stabilization of amorphous semiconductors

H - Electricity

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L

356/176

H01L 21/02 (2006.01) H01L 31/0376 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1311861

Abstract An amorphous semiconductor film is prepared by the usual procedure and, then, stabilized by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.

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