Stabilization of the interface between tin and a1 alloys

Details Stabilization of the interface between tin and a1 alloys Stabilization of the interface between tin and a1 alloys

H - Electricity

01

L

H01L 21/18 (2006.01) H01L 21/768 (2006.01)

Patent

CA 2191260

A method of manufacturing an integrated circuit which includes an interface between a metal layer and a barrier layer of a nitride of a refractory metal, comprising the steps of depositing the barrier layer onto a wafer at high temperature; subjecting the barrier layer to a mixture of oxygen or an oxygen-containing gas and an inert gas in the presence of a plasma at low pressure and for a time sufficient to oxidize the surface of the barrier layer; removing the oxygen-containing gas; and depositing the metal layer onto the oxidized surface without subjecting said wafer to an air break. The method permits high throughput to be achieved at low cost.

Procédé pour fabriquer un circuit intégré, comportant une interface entre une couche métallique et une couche barrière de nitrure d'un métal réfractaire. Le procédé consiste à déposer la couche barrière sur une plaquette à haute température, à exposer cette couche à un mélange d'oxygène ou de gaz oxygéné et à un gaz inerte, en présence d'un plasma à basse pression et pendant assez longtemps pour oxyder la surface de la couche barrière, à éliminer le gaz oxygéné, et à déposer la couche métallique sur la surface oxydée sans soumettre la plaquette à une exposition à l'air. La méthode permet d'obtenir un haut rendement à faible coût.

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