Stabilization process for aluminum microcircuits which have...

Details Stabilization process for aluminum microcircuits which have... Stabilization process for aluminum microcircuits which have...

H - Electricity

05

K

356/2

H05K 1/00 (2006.01) C23C 8/12 (2006.01) H01L 21/316 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1114071

STABILIZATION PROCESS FOR ALUMINUM MICROCIRCUITS WHICH HAVE BEEN REACTIVE-ION ETCHED Abstract Aluminum microcircuits which have been prepared by reactive- ion etching are stabilized against open circuits and short cir- cuits by treating the microcircuits in an oxygen-containing atmosphere at a temperature of from about 200°C to about 450°C. SA978017

334792

Affiliated with

Also associated with

Rating

Stabilization process for aluminum microcircuits which have... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stabilization process for aluminum microcircuits which have..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stabilization process for aluminum microcircuits which have... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-755960