Stabilized droplet method of making deep diodes

Details Stabilized droplet method of making deep diodes Stabilized droplet method of making deep diodes

C - Chemistry, Metallurgy

30

B

356/64, 148/1.9

C30B 13/00 (2006.01) C30B 13/10 (2006.01) H01L 21/24 (2006.01) H01L 29/00 (2006.01)

Patent

CA 1040076

ABSTRACT OF THE DISCLOSURE Erratic electrical properties of semiconductor devices made by the thermal gradient zone melting method can result from physical instability of the migrating metal-rich liquid droplets. By limiting droplet size to a maximum cross-sectional dimension of one millimeter, this cause of defective devices can be eliminated.

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