C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
31/154, 148/2.8
C30B 31/00 (2006.01) C30B 31/02 (2006.01) H01L 21/22 (2006.01) H01L 21/225 (2006.01)
Patent
CA 1211929
ABSTRACT STABLE SUSPENSIONS OF BORON, PHOSPHORUS, ANTIMONY AND ARSENIC DOPANTS Semiconductor doping compositions comprising a sus- pension of (a) a dopant material, in the form of finely divided spherical particles, such as PxSiy or BxSiy wherein x and y vary from 0.001 to 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacry- late; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three one- step diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford greater processing latitude, are more reproducible and are less prone to create damage to and/or staining of the semiconductor substrate.
454291
Donlan Jeffrey P.
Gupta Arunava
West Gary A.
Allied Corporation
Gowling Lafleur Henderson Llp
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