Stacked metal silicide gate structure with barrier

Details Stacked metal silicide gate structure with barrier Stacked metal silicide gate structure with barrier

H - Electricity

01

L

356/78

H01L 29/76 (2006.01) H01L 29/49 (2006.01)

Patent

CA 1273439

YO986-082 ABSTRACT OF THE DISCLOSURE A gate structure for integrated circuit devices which includes a work function layer, a low resistivity layer, and an electrically conductive barrier layer between the two other layers to prevent the other two layers from intermixing. The work function controlling layer is preferably selected from the group of tungsten, molybdenum, their silicides, or a combination thereof.

565452

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