Stacked mos transistor

Details Stacked mos transistor Stacked mos transistor

H - Electricity

01

L

356/128

H01L 29/78 (2006.01) H01L 21/268 (2006.01) H01L 21/8234 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1191970

STACKED MOS TRANSISTOR Abstract of the Disclosure In a stacked metal-oxide-semiconductor (SMOS) transistor, the transistor source, drain and channel each have a lower part formed in a silicon substrate and an upper part composed of recrystallized polysilicon. The device gate is located between the upper and lower channel parts. By vertically integrating a MOS transistor, performance limitations imposed by the direct scaling approach to device miniaturization are avoided. - i -

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