Static induction transistors with improved gate structures

Details Static induction transistors with improved gate structures Static induction transistors with improved gate structures

H - Electricity

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356/149

H01L 21/461 (2006.01) H01L 29/10 (2006.01) H01L 29/423 (2006.01) H01L 29/772 (2006.01)

Patent

CA 1149083

STATIC INDUCTION TRANSISTORS WITH IMPROVED GATE STRUCTURES Abstract of the Disclosure Vertical geometry static induction transistors have gate structures which improve high frequency performance and which simplify device fabrication. Ohmic source and drain contacts are formed on opposite sides of a layer of high resistivity semiconductor material of one conductivity type. Grooves, typically V-shaped, are formed in the sur- face of the high resistivity layer on opposite sides of the source. According to one embodiment, the gate junctions are formed by diffusing semiconductor material of the oppo- site conductivity type into the surfaces of the V-shaped grooves. According to another embodiment, the gate junc- tions are Schottky contacts formed by applying a metalliza- tion directly to the surfaces of the V-shaped grooves.

373040

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