Static ram memory cell

G - Physics – 11 – C

Patent

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352/82.3

G11C 11/34 (2006.01) G11C 11/412 (2006.01) G11C 15/04 (2006.01)

Patent

CA 1160742

14 STATIC RAM MEMORY CELL ABSTRACT OF THE DISCLOSURE A memory cell (10) for storing data having a data line (12) and a bit enable line (16) for receiving control signals is provided. First and second signal lines (24, 26) receive control signals. A first transistor (14) is interconnected to the data line (12) and to the bit enable line (16). A second transistor (20) is connected to the first transistor (14) and to the first control line (24). A third transistor (22) is connected to the first transistor (14) and to the second control line (26). A first inverter (30) is interconnected to the second transistor (20) to form a first node (34) and to the third transistor (22) to form a second node (36). A second inverter (32) is interconnected between the first node (34) and the second node (36).

393093

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