Storage system having bilateral field effect transistor...

Details Storage system having bilateral field effect transistor... Storage system having bilateral field effect transistor...

G - Physics

11

C

352/40

G11C 11/40 (2006.01) G11C 11/34 (2006.01) G11C 11/56 (2006.01)

Patent

CA 1169556

Abstract A Storage System Having Bilateral Field Effect Transistor Personalization A storage system, such as a read only memory, is provided which includes field effect transistors each having first and second spaced apart diffusion regions of a given conductivity and a gate electrode, with at least one of the two diffusion regions of selected transistors having a third diffusion adjacent to one of the first and second diffusion regions under the gate electrodes to provide a higher voltage threshold for the gate electrode to one diffusion than for the gate electrode to the other of the two diffusions. A voltage is applied to the first diffusion having a polarity and magnitude sufficient to neutralize or eliminate the effects of the higher threshold during a first time period and the current flowing between the first and second diffusions is sensed. During a second period of time the voltage is applied to the second diffusion and the current flow between the first and second diffusions is again sensed. In this manner two cells or bits of information are stored in each transistor, one at the first diffusion and one at the second diffusion. Multilevel storing may also be employed by establishing one of more than two predetermined voltage thresholds at each of the first and second diffusions. BU9-79-017

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