Strained quantum well type semiconductor laser device

Details Strained quantum well type semiconductor laser device Strained quantum well type semiconductor laser device

H - Electricity

01

S

H01S 5/34 (2006.01) H01S 5/02 (2006.01) H01S 5/343 (2006.01) H01S 3/085 (1990.01)

Patent

CA 2083026

A strained quantum well type semiconductor laser device is disclosed comprising a plurality of layers including a quantum well active layer formed on a semiconductor substrate characterized wherein tensile strained quantum well layers and compression strained barrier layers are stacked alternately to form said quantum well active layer and the quantum well layers are made of either InGaAs or InGaAsP and InP, when the semiconductor substrate is made of InP, InGaP or GaAs, respectively.

aser à semi-conducteur du type à puits quantique contraint comprenant un certain nombre de couches dont une couche active à puits quantique formée sur un substrat semi-conducteur caractérisé dans lequel les couches du puits quantique contraintes par tension et les couches barrières contraintes par compression sont empilées en alternance et les couches du puits quantique sont faites soit d'InGaAs soit d'InGaAsP et d'InP, alors que le substrat est fait de InP, InGaP ou de GaAS, respectivement.

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