Stress reduction in a1gaas-a1gaasp multilayer structures

Details Stress reduction in a1gaas-a1gaasp multilayer structures Stress reduction in a1gaas-a1gaasp multilayer structures

H - Electricity

01

S

345/51, 148/3.8

H01S 5/20 (2006.01) C30B 31/00 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1040514

Abstract of the Disclosure The average stress between contiguous layers of AlxGa1-xAs and AlyGa1-yAs (y > x) is reduced by the addition of phosphorus during the growth of the latter layer to produce the quaternary AlyGa1-yAs1-zPz instead of the ternary AlyGa1-yAs. In order to reduce the average stress to less than about 2 x 108 dynes/cm2 the amount of phosphorus added should satisfy the condition: Image Also described is a double heterostructure junction laser comprising a GaAs or AlGaAs active layer sandwiched between layers of AlGaAsP. - 1 -

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