Stripping compositions for semiconductor substrates

Details Stripping compositions for semiconductor substrates Stripping compositions for semiconductor substrates

G - Physics

03

F

G03F 7/30 (2006.01) G03F 7/32 (2006.01) G03F 7/42 (2006.01) H01L 21/311 (2006.01) H01L 21/306 (2006.01)

Patent

CA 2332390

The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid 2-17 %, Organic amine or mixture of amines 35-70 %, Water 20-45 %, Glycol solvent (optional) 0-5 %, Chelating agent (optional) 0-17 %. The preferred amines are: Monoethanolamine (MEA), Triethanolamine (TEA).

L'invention concerne des formulations d'élimination, permettant d'éliminer sur les plaquettes des résidus qui résultent d'une attaque du métal au plasma à halogène suivie d'un ébarbage au plasma d'oxygène. Lesdites formulations renferment les éléments généraux suivants (pourcentages, en poids) : acide borique, 2-17 %, amine organique ou mélange d'amines, 35-70 %, eau, 20-45 %, solvant à base de glycol (facultatif), 0-5 %, chélateur (facultatif), 0-17 %. Les amines utilisées de préférence sont les suivantes : monoéthanolamine, triéthanolamine.

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