H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/227 (2006.01) H01L 21/306 (2006.01) H01S 5/062 (2006.01) H01S 5/323 (2006.01) H01S 3/18 (1990.01)
Patent
CA 2072632
2072632 9205576 PCTABS00011 A semiconductor laser having a high modulation band-width is made by utilizing an InGaAsP cap layer (14) and an InGaAsP active layer (12) of different crystal structure. Channels (21 and 22) are anisotropically etched through the cap (14), cladding (13) and active layers (12) and partially through the buffer layer (11). The active (12) and cap layers (14) are laterally etched and a semi-insulating material (30) is overlayed the sidewalls. A further etching leaves a thin wall (31 and 32) of the semi-insulating material surrounding the active layer (12). 1.3 µm InGaAsP lasers with 3 dB bandwidths of 24 GHz and intrinsic resonance frequencies in excess of 22 GHz have been successfully fabricated. This is the highest bandwidth ever reported for a semiconductor laser, and the highest resonance frequency for InGaAsP lasers. Excellent modulation efficiencies are observed to high frequencies.
Holmstrom Roger P.
Meland Edmund
Powazinik William
Gte Laboratories Incorporated
Holmstrom Roger P.
Meland Edmund
Powazinik William
R. William Wray & Associates
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