Structure and process for lift-off wafer processing

Details Structure and process for lift-off wafer processing Structure and process for lift-off wafer processing

H - Electricity

01

L

149/10, 356/134

H01L 27/04 (2006.01) G03F 7/09 (2006.01) H01L 21/027 (2006.01)

Patent

CA 1213077

ABSTRACT OF THE DISCLOSURE An improved lift-off process for forming metal- lized interconnections between various regions on a semi- conductor device relies on the use of a particular polyimide in forming a protective mask over the device. The polyimide is a copolymer of an aromatic cycloaliphatic diamine and a dianhydride which allows the resulting structure to with- stand particularly high temperatures in the fabrication process. In particular, the polyimide when subjected to high temperature metallization under vacuum remains suffi- ciently soluble to be substantially completely removed from the device by immersion in common organic solvents. This allows high temperature metallization as interconnects for integrated circuits.

433642

Affiliated with

Also associated with

Rating

Structure and process for lift-off wafer processing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and process for lift-off wafer processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and process for lift-off wafer processing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1322216