Structure and technique for achieving reduced inductive...

Details Structure and technique for achieving reduced inductive... Structure and technique for achieving reduced inductive...

H - Electricity

01

L

347/35, 356/8

H01L 27/02 (2006.01) H01L 23/538 (2006.01) H01L 23/66 (2006.01)

Patent

CA 1099821

ABSTRACT An RF power transistor device, or package, which includes a transistor, a capacitor, an electrically insulat- ing but thermally conducting substrate, a metallic ground lead member on the substrate having input output and common portions, a heat sink on which the substrate is mounted and, input and output microstrip conductor means mounted on the heat sink has the common lead inductive effect of at least one component of common lead inductance of the transistor reduced by tightly coupling the input ground current and the input current as by a film of dielectric material such as Kapton ? or Teflon ? of about one half mil in thickness. Alternatively the output current and the output ground current may be tightly coupled.

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