H - Electricity – 01 – F
Patent
H - Electricity
01
F
H01F 10/00 (2006.01) B32B 5/16 (2006.01) H01F 10/08 (2006.01) H01F 10/26 (2006.01) G11B 5/39 (2006.01)
Patent
CA 2348955
A GMR stack has at least two ferromagnetic layers (e.g., CoFe) spaced from each other by a nonferromagnetic layer (e.g., Cu). A layer of a phase-breaking material (such as Ta or a Ta-base alloy) between the nonferromagnetic layer and at least one of the two ferromagnetic layers prevents the undesirable growth of large-grained structures in the ferromagnetic layers.
Empilement de résistances magnétiques géantes contenant au moins deux couches ferromagnétiques (p.ex. CoFe) séparées par une couche non ferromagnétique (p.ex. Cu). Une couche de matériau de dissociation de phase (tel que le tantale ou un alliage à base de tantale) située entre la couche non ferromagnétique et au moins une des deux couches ferromagnétiques prévient la croissance indésirable de structures à gros grains dans les couches ferromagnétiques.
Bussman Konrad
Cheng Shu-Fan
Lubitz Peter
Norton Rose Or S.e.n.c.r.l. S.r.l./llp
The United States Of America As Represented By The Secretary Of The Nav Y.
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