Sub-micron bonded soi by trench planarization

Details Sub-micron bonded soi by trench planarization Sub-micron bonded soi by trench planarization

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2130149

Abstract A silicon on insulator substrate 8 provides islands of silicon 18 of uniform thickness by using a trench etch process and a silicon nitride layer 20 to provide a thickness control and polish stop for the silicon islands 18.

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