G - Physics – 03 – F
Patent
G - Physics
03
F
G03F 9/00 (2006.01) H01J 37/317 (2006.01) H01L 21/027 (2006.01)
Patent
CA 2094519
Fabrication of sub-micron design rule integrated circuits entails imposition of patterning information, consisting of degree of scattering, on a projected scanning beam of accelerated electrons by means of a mask, imaging being dependent upon passage through a back focal plane filter including a plurality of apertures forselectively passing relatively unscattered electrons.
La fabrication de circuits intégrés suivant une règle de conception submicronique comprend l'imposition d'information de structure, relative au degré de dispersion, sur un faisceau explorateur projeté, d'électrons accélérés au moyen d'un masque, l'imagerie dépendant du passage à travers un filtre de plan focal arrière, y compris un certain nombre d'ouvertures permettant le passage sélectif d'électrons relativement non dispersés.
Berger Steven David
Liddle James Alexander
American Telephone And Telegraph Company
Kirby Eades Gale Baker
LandOfFree
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