Submicron circuit structures and methods of formation

H - Electricity – 01 – L

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H01L 27/00 (2006.01) G03F 7/095 (2006.01) G03F 7/20 (2006.01) H01L 21/027 (2006.01) H01L 21/70 (2006.01) H05K 3/00 (2006.01) H05K 3/04 (2006.01) H05K 3/06 (2006.01)

Patent

CA 1204882

SUBMICRON CIRCUIT STRUCTURES AND METHOD OF FORMATION ABSTRACT Double sided lithography is disclosed for fabricating ultra-small multilayer microcircuit structures without need for any intermediate realignment and without need for any intermediate layer deposition involving re- establishment of surface planarity. Microcircuit patterns are defined on opposite sides of a thin sub- strate by an exposure tool without intermediate removal of the substrate from the exposure tool, the microcircuit pattern on one side being defined by incident patterning radiation and the microcircuit pattern on the other side being defined by patterning radiation which has passed through the thin substrate.

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