Substance-sensitive electrical structures and method for...

Details Substance-sensitive electrical structures and method for... Substance-sensitive electrical structures and method for...

H - Electricity

01

L

356/93

H01L 29/82 (2006.01) G01N 27/403 (2006.01) G01N 27/414 (2006.01)

Patent

CA 1112769

ABSTRACT OF THE DISCLOSURE Disclosed is a substance-sensitive semiconductor and a method for making the same, wherein a substance- sensitive material is combined with photoresist material and applied to an electronic device structure. The substance-sensitive material may be applied before or after the photoresist material, or even may be combined with the photoresist material to form a substance- sensitive layer of photoresist material on the semi- conductor. The photoresist material is then processed, such that unwanted, or undesirable areas are free from the photoresist material and the areas of desired substance sensitivity have a fully processed photoresist layer. A further embodiment of the present disclosure provides multiple layers sensitive to different ions on a single sheet or semiconductor or electromagnetically active material.

317549

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