Substitutional carbon in silicon

Details Substitutional carbon in silicon Substitutional carbon in silicon

H - Electricity

01

L

H01L 21/265 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2054722

The invention provides a method of producing silicon with about 100 % substitutionality of very high concentrations of carbon up to about 10 21cm-3, which has good quality recrystallised layers containing low levels of residual damage, and which avoids precipitation of mobile carbon. This method, compatible with current state-of-the art VLSI silicon technology, comprises the sequential steps of: implanting a silicon wafer with carbon ions, and two steps annealing of the implanted silicon wafer.

Un procédé permet de produire du silicium qui a jusqu'à 100 % d'une concentration élevée de carbone de substitution pouvant aller jusqu'à 1021cm-3, qui a des couches recristallisées de bonne qualité à niveaux réduits de dommages résiduels et qui évite la précipitation du carbone mobile. Ce procédé, qui est compatible avec la technologie actuelle d'intégration à très grande échelle de silicium, comprend deux étapes successives: (1) l'implantation d'ions carbone dans une tranche au silicium et (2) le recuit en deux étapes de la tranche en silicium implantée.

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