C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.4, 148/3.4
C30B 25/18 (2006.01) C30B 25/20 (2006.01) C30B 33/02 (2006.01) H01L 21/20 (2006.01)
Patent
CA 2011986
In order to grow single crystal, solid state devices onto a mismatched substrate, a secondary substrate is obtained by growing an epilayer divided into mesas onto the primary substrate. The epilayer is annealed and this relieves the strain and causes dislocations to terminate preferentially on the sides of the mesas.
Pour créer des dispositifs à semi-conducteur monocristallin par croissance sur un substrat non apparié, on obtient un substrat secondaire en faisant croître sur le premier substrat une couche épitaxiale divisée en mésas. Cette couche épitaxiale est recuite pour réduire les tensions mécaniques et les dislocations se limitent aux côtés des mésas dans les meilleurs cas.
Gibbings Christopher J.
Tuppen Christopher G.
G. Ronald Bell & Associates
Ipg Photonics Corporation
LandOfFree
Substrate for a semiconductor device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Substrate for a semiconductor device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate for a semiconductor device and method of... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1660002