H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/498 (2006.01)
Patent
CA 2256378
A wiring substrate is disclosed, which has optimal characteristics for, for example, an active matrix type liquid crystal display device with a thin film transistor. Wiring formed of an Al-Nd-Ti alloy thin film is formed on a glass substrate, and if necessary, a semiconductor element which is electrically connected to the wiring is formed. In this case, the specific resistance of the Al-Nd-Ti alloy thin film is about 8 µ.OMEGA. cm if the Nd concentration is 0.75 at % and the Ti concentration is 0.5 at %. Further, even if the resultant substrate is heated at 240 - 270 ~C after the formation of the wiring, occurrence of a hillock and a pinhole is substantially completely suppressed.
La présente invention concerne un substrat de câblage dont les caractéristiques sont optimales pour un afficheur à cristaux liquides de type matrice active à transistor en film mince. Le câblage en film mince d'alliage Al-Nd-Ti est formé sur un substrat de verre avec, éventuellement, un élément semi-conducteur électriquement relié au câblage. Dans ce cas, la résistance spécifique du film mince d'alliage Al-Nd-Ti est d'environ 8 µ.OMEGA. cm si la concentration en Nd est 0,75 % et si la concentration en Ti est 0.5 %. En outre, même si on chauffe le substrat résultant à 240-270 ·C après la formation du câblage, on supprime presque totalement le risque de formation de boursouflures et de trous d'épingle.
Kamiya Kenji
Shiota Junji
Casio Computer Co. Ltd.
Ridout & Maybee Llp
LandOfFree
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