H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/22 (2006.01) H01L 29/78 (2006.01) H01L 39/14 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2054477
A superconducting device comprises a substrate, and a superconducting channel constituted of an oxide superconductor thin film formed to have an angle to a deposition surface of the substrate. A superconductor source electrode and a superconductor drain electrode are formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconductor source electrode and the superconductor drain electrode. A gate electrode is formed of an oxide superconductor thin film which is deposited in parallel to the deposition surface of the substrate and which has an end abutted through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Bereskin & Parr
Sumitomo Electric Industries Ltd.
LandOfFree
Superconducting device having an extremely short... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Superconducting device having an extremely short..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Superconducting device having an extremely short... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1809189