C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/157, 148/24,
C23C 14/24 (2006.01) C23C 14/28 (2006.01) C23C 14/32 (2006.01) H01L 39/12 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2021821
A superconducting thin film of Bi-containing compound oxide deposited on a substrate, a buffer layer made of Bi2O3 being interposed between the superconducting thin film and the substrate.
Un film mince supraconducteur d'oxyde composé du contenant du Bi déposé sur un substrat, une couche tampon faite de Bi2O3 étant interposée entre le film mince supraconducteur et le substrat.
Harada Keizo
Itozaki Hideo
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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