H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/10 (2006.01) H01L 31/00 (2006.01)
Patent
CA 2042192
The disclosed superconductive optoelectronic device stems from the inventor's important discovery of a phenomenon that the basic substance Cu2O reveals photoconductivity below several temperatures Tps in steps thereof, Tps being comparable with a series of the critical temperatures of superconductivity Tsc of relevant Cu-based superconductors, and such photoconduc- tivity of the basic substance is in a conjugate relationship with the superconductivity of the above Cu-based superconductors. The device of the invention has a gate region made of the above basic substance Cu2O and a source region and a drain region made of the above Cu-based superconductors, the source and drain regions connected to each other, so that electric current therebetween at a temperature below the step temperature Tps of the basic substance is switched andtor controlled by the incident light intensity illuminated to the gate region. Also disclosed is an apparatus carrying a plurality with diversity of the above superconductive optoelectronic devices formed therein of an organized space-integration at ultrahigh density, in the form of arrays, and the like, to further develop effectively a new field of "Superconductive Optoelectronics".
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
University Of Tokyo (the)
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