Superconductive optoelectronic devices

Details Superconductive optoelectronic devices Superconductive optoelectronic devices

H - Electricity

01

L

356/112, 345/28

H01L 39/22 (2006.01) H01L 39/10 (2006.01)

Patent

CA 1310391

SUPERCONDUCTIVE OPTOELECTRONIC DEVICES Abstract of the Disclosure The disclosed superconductive optoelectronic device has a substrate, a photoconductive gate region formed on the substrate, and a source region and a drain region formed on the substrate at opposite sides of the gate region so as to face toward each other across the gate region . The source region and the drain region are made of a superconductive material. The gate region is made of such superconductive photoconductive- material, which reveals photoconductivity at a temperature below the transition temperature of the above superconductive material and has a similar general chemical formula to that of the above superconductive material except that concentrations of constituent elements are different. Also disclosed are superconduc- tive optoelectronic devices formed of an organized integration of the above superconductive optoelectronic devices to develop a new field of "Superconductive Opto- Electronics".

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