G - Physics – 01 – N
Patent
G - Physics
01
N
356/149
G01N 27/30 (2006.01) G01N 27/414 (2006.01) H01L 21/28 (2006.01)
Patent
CA 1190328
SUPPORT AND ANCHORING MECHANISM FOR MEMBRANES IN SELECTIVELY RESPONSIVE FIELD EFFECT DEVICES Abstract In the formation of a chemically sensitive field effect device, prior to formation of the gate membrane, an aluminum pad is disposed over the gate, and a polyimide layer is disposed thereover. Photoresist and etching steps produce openings in the polyimide to form a gridwork which is anchored to the device on the periphery of the gate. The aluminum layer is etched completely away, forming a void defined by the suspended polyimide mesh on one side, and the gate insulator on the other. Polymeric membrane is formed in the void by insertion in liquid form.
411974
Critikon Company L.l.c.
Norton Rose Or S.e.n.c.r.l. S.r.l./llp
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