Surface acoustic wave device

Details Surface acoustic wave device Surface acoustic wave device

H - Electricity

03

H

349/59.1

H03H 9/145 (2006.01) H03H 3/08 (2006.01) H03H 9/02 (2006.01)

Patent

CA 2020411

ABSTRACT OF THE DISCLOSURE A surface acoustic wave device includes a substrate which is made up of single-crystalline dielectric member and a piezoelectric thin film epitaxially grown thereon. An aluminum electrode defining an interdigital electrode is formed along the interface between the dielectric member and the piezoelectric thin film. This aluminum electrode is formed of an aluminum film which is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum electrode is suppressed while enabling epitaxial growth of the piezoelectric thin film over the entire surface insert.

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